Haugelamm3615

In this study, we investigated thermoelectric materials with durability against mechanical stress using Ag₂Se nanoparticle (NP) thin films and colorless polyimide (CPI) substrates. Ag₂Se NP thin films and CPI substrates were produced by spin-coating, and their thicknesses were 40 nm and 15 μm, respectively. A bendable thermoelectric film with a channel length of 40 μm and a channel area of 1.6 μm² generated a Seebeck voltage of 1.43 mV at a temperature difference of 4.5 K. Owing to the thickness of the extremely thin thermoelectric film and substrate, the mechanical strain was only 0.15% even when the thermoelectric devices were bent with a curvature of 3 mm. Therefore, it was determined that the bendable thermoelectric film was robust against mechanical stress.An alternative catalytic method was employed using the reduction of Pd ions on the surface of cetyltrimethylammonium bromide (CTAB) treated laponite to initiate the electroless plating of copper; the deposition features of the Pd nanoparticles produced were investigated in detail. Results indicated intercalation and reduction of Pd nanoparticles occurred at room temperature and involved interaction between the laponite and the cetyltrimethylammonium cationic templates. Organic species and amount on laponite were optimized to adjust silicate platelet interlayer distances and platelet organophilic properties. Intercalation of Pd nanoparticles occurred between the magnesium silicate layers of laponite and this was dependent on pre-treatment and impregnation times. As impregnation is a method of producing heterogeneous catalysts, we considered Pd nanoparticles on laponite templates could catalyze the electroless deposition of Cu to initiate metallization. Cu films fabricated on laponite templates exhibited excellent surface roughness (˜1.7 nm) and low resistivity (˜3.42 μΩ). The devised approach enabled the facile formation of a network suitable for Cu metallization without causing substrate damage and produced metal surfaces with excellent flatness and resistivity.In this study, highly transparent siloxane-based hybrid UV-curable coating materials were prepared using (acryloxypropyl)methylsiloxane monomer (APMS), a thiol-ene monomer, with benzoin ethyl ether. For the thiol-ene monomer, either pentaerythritol tetrakis(3-mercaptopropionate) (PETTMP) or trimethylolpropane tris(3-mercaptopropionate) (TMPTMP) was used. The siloxane-based hybrid coating materials were highly transparent and hard (pencil hardness of 6-7H). The materials were also amphiphobic, with a water static contact angle of 92-100° and an oil contact angle of 46-63°, when prepared with a high siloxane-monomer-to-PETTMP/TMPTMP ratio. In general, both hybrid coating materials exhibited improved oleophobicity, high hardness, and surface smoothness with increasing siloxane content, although the TMPTMP-based hybrid coating films exhibited slightly higher oleophobicity (lower hydrophobicity) and a smoother surface than the PETTMP-based hybrid coating films.Epoxy adhesive was analyzed under long term thermal aging and mechanical properties and chemical degradation were observed by X-ray photoelectron spectroscopy (XPS). Long term thermal exposure of epoxy causes a noticeable reduction in adhesive properties. We developed a predictive model of temperature and time dependent aging. The temperature dependent aging behavior of epoxy adhesive shows good agreement with conventional Arrhenius equations. Using XPS analysis, we also discovered a correlation between chemical degradation and the adhesive properties. Decay of C-C bonding ratio induced chain-scission of epoxy adhesive; increase of total numbers of C-O and C═O induced oxidation of epoxy adhesive during thermal exposure.Porous polycaprolactone-based polyurethane composites containing hollow silica microspheres were synthesized by one-step bulk polymerization. The effects of incorporated hollow silica microspheres on the cyclic compressive and dynamic mechanical properties of the composites were examined. Cyclic compression testing was carried out to record the accumulated stress versus strain profiles during 100 continuous loading and unloading cycles and to study the compressive behavior and time-dependent recovery of the composites. The effects of frequency on the dynamic mechanical properties of the composites was also investigated using a dynamic mechanical analyzer. Cole-Cole and Wicket plots were drawn to check the validity of the time-temperature supposition of the composites in the temperature and frequency ranges considered. Master curves of the composites were constructed based on the time-temperature superposition principle to obtain the long-term dynamic mechanical behavior of the composites.Heat dissipation properties are very important in AlGaN/GaN RF high electron mobility transistor (HEMT) devices operating at high frequency and high power. Therefore, in order to extract the thermal conductivity of the substrate and device, which are essential for the analysis of the heat dissipation characteristics, various methods of extraction were attempted. And this experiments were conducted in parallel with micro-raman measurement and thermal simulation. As a result, it was possible to extract the thermal conductivity of each GaN-on-diamond epi layer by matching the thermal simulation data and the shift of the micro-raman peak according to various operating states and temperatures of the transmission line method (TLM) pattern. In particular, we tried to extract the thermal boundary resistance (TBR) of the interface layer (SiNx) for adhesion between GaN and diamond, which greatly affects the thermal conductivity of the device, and successfully extracted the following thermal conductivity value of KTBR = 3.162·(T/300)-0.8 (W/mK) from GaN and diamond interface layer.Devices based on AlGaN/GaN heterostructures, for example, Schottky barrier diodes (SBDs) and high electron mobility transistors (HEMTs), have been intensively investigated for applications to high-frequency and high-power areas. Compound 37 Presently, the substrates widely distributed are AlGaN/GaN on SiC for its high performance in radio frequency (RF) applications, for examples high cutoff frequency (fT) or high maximum oscillation frequency (fmax), and AlGaN/GaN on Si for its high power performance, for examples high breakdown voltage or high voltage operation. Chemical vapor deposition (CVD) diamond substrates have a thermal conductivity of 12 W/cm·K, and this is a remarkable point because HEMTs or SBDs on AlGaN/GaN on CVD diamonds are one of the promising alternatives for power and RF applications. In comparison, the thermal conductivity of AlGaN/GaN on a sapphire substrate is 0.33 W/cm·K while that of AlGaN/GaN on a Si substrate is 1.3 W/cm·K and that of AlGaN/GaN on a SiC substrate is 4.9 W/cm·K. In this work, we fabricated SBDs with a 137 mm Schottky channel length on AlGaN/GaN on Si and also on a CVD diamond substrate.