Carpentereriksson6368

Transparent conductive oxide (TCO) semiconductors are attracted considerable attention due to a wide range of applications, such as flat panel display (FPD), touch panels, solar cells, and other optoelectronic devices. Owing to the different carrier conduction paths between n-type and P-type TCOs, the n-type TCO used in TFTs usually have high Ion/Ioff current ratio (>107) and high electron mobility (>10 cm²/V·s), P-type TCO TFTs are both lower than that of n-type one. For complementary circuits design and applications, however, both P-type and n-type semiconductor materials are equally important. For SnO thin films, it is important to adjust the ratio of Sn2+ (SnO P-type) and Sn4+ (SnO₂ n-type) in order to modulate the electrical characteristics. In this investigation of post treatment for SnO thin films, both microwave annealing (MWA) and furnace annealing process with 0₂ ambient are studied. The results show that SnO thin films are optimized at 300 °C, 30 minutes furnace annealing, the P-type SnO/SnO₂ thin film shows surface mean roughness 0.168 nm, [Sn2+]/[Sn4+] ratio as 0.838, at least 80% transmittance between 380 nm-700 nm visible light. Withthe results, SnO can be even used to fabricate high performance P-type thin film transistors (TFTs) device for future applications.In this work, corrosion resistance and cavitation-erosion characteristics were investigated by applying plasma ion nitriding technique to cast stainless steels used as materials of high speed rotors under seawater environment. Plasma ion nitriding was performed for 10 h at various temperature parameters with 25% N₂ and 75% H₂ gas ratio. The cavitation-erosion experiment was carried out under vibration amplitude of 30 °C and sea water temperature of 25 °C according to modified ASTM G32-92. The yN phase that improves corrosion resistance and mechanical properties was formed at the all of experimnetal temperatures after plasma ion nitriding treatment. The crystallite size of phases was calculated through the XRD patterns according to Scherrer formula and obtained smallest nano size of yN phase at 450 °C. Cavitation-erosion resistance was enhanced up to 450 °C but was deteriorated at 500 °C.Magnetic Fe₂O3/Fe₃O4@SiO₂ nanocomposites were prepared via the citric-alcohol solution combustion process. The obtained nanocomposites were characterized with SEM, XRD, VSM, TEM, EDS, HRTEM, and FTIR techniques. The results revealed that the magnetic Fe₂O₃/Fe₃O₄@SiO₂ nanocomposites were successfully obtained with the average grain size of 87 nm and the saturation magnetization of 36 emu/g. After the surface of magnetic Fe₂O₃/Fe₃O₄@SiO₂ nanocomposites was functionalized by amino group, the amino-functionalized Fe₂O₃/Fe₃O₄@SiO₂-NH₂ nanocomposites were loaded onto graphene oxide based on Mitsunobu reaction. Subsequently, the cellulase was immobilized onto Fe₂O₃/Fe₃O₄@SiO₂-NH-GO nanocomposites by a glutaraldehyde-mediated Schiff base reaction. The immobilization conditions were optimized by adjusting the pH, temperature, and cellulase dose. click here The results revealed that optimized immobilization conditions were determined to be temperature of 50 °C, pH of 5, and cellulase solution of 0.1 mL. 97.3% cellulase were successfully immobilized under the optimal conditions. The catalytic performances of the immobilized cellulase were also evaluated. The maximum activity was achieved at pH 4, and 50 °C with cellulase solution of 0.4 mL.Herein, we report a novel composite structure consisting of Ni₃Bi₂S₂ particles coupled with N-doped carbon (NC) sheets. Different from the generally used high vacuum or microwave-assisted technologies, metal-rich Ni₃Bi₂S₂ can be successfully synthesized via a simple pyrolysis procedure, with NC employed as a reducing agent. In addition, the phase purity, size, and dispersity of the Ni₃Bi₂S₂ particles, which were encapsulated by the NC shell, were modulated by the content of NC. The X-ray photoelectron spectroscopy (XPS) analysis demonstrated the metallic state of the Ni and Bi elements, which ensured good Ni₃Bi₂S₂ electrical conductivity. As a result, the resultant Ni₃Bi₂S₂/NC (0.55 II) catalyzed triiodide reduction with a lower charge transfer resistance than commercial Pt/C (1.4 II). Moreover, Ni₃Bi₂S₂/NC catalyzed the oxygen reduction reaction with a positive ORR half-wave potential (0.81 V vs. RHE) and a low Tafel slope (47 mV dec-1). Our study thus provides the novel exploration of the electrochemical performance of Ni₃Bi₂S₂ and indicates its promising application in electrocatalytic reactions.Recently, the technology of the industry has been increasing for diffractive optical elements, holograms, optical components, and next-generation display components. The advanced high value-added industry is designing fine patterns on ultra-precision optical components and applying them to various industries. In the case of the ultra-fine pattern, a contact-type machining technique is required because it requires a precise pattern in nano-scale units. In this paper, the fabrication technology of ultra-precision diamond which is essential in the ultra-precision processing technology was suggested. The material used in the experiment was a single-crystal diamond tool (SCD), and the equipment for machining the SCD used a focused ion beam (FEI COMPANY, system Nova 600) equipment. The back fire method was applied without metal coating in order to carry out the process study and the focused beam of 30 keV Ga+ ions were carried out processing for various fabrication of diamond cutting tools. As a result of applying the backfire method through the process experiment, the cutting edge width of the ultra-precision diamond tool was verified 275 nm.With the development of thick-film paste, silver and copper are circulating in the market as the electric conductive fillings currently. Unfortunately, the cost of silver is exceedingly high, while the copper has to be sintered in the reducing atmosphere. In this study, we proposed to exert aluminum as the filling due to its low cost, good electrical conductivity, and capability of being sintered in air. By means of the fracture mechanism of the oxidation layer of the Al surface and the liquid phase sintering, the Al paste with high solid content is used to implement high electrical conductivity. Based on that Al powder with large particle size tends to fracture easily, while it is easy for Al powder with small size to fill the gap, we mixed Al powder with large and small particle sizes at different proportion, so that the internal micro-structure and the oxidization are observed. However, when glass frit was added into mixed Al powder, the Al particles are wet by glass frit for bonding Al particles as well as inhibiting oxidation.