Bryantmcpherson3255

45 V versus RHE. The superior performance of cysteine-based MoS₂ sample is due to the rapid charge transfer as confirmed by EIS and excellent conductivity as witnessed by low optical band gap. These findings strengthen the understanding of fundamental science of Mo-based catalysts for the development of the future generation of electrocatalysts and energy conversion technologies.We developed a novel sensor structure by synthesizing Pd nanocubes (NCs) decorated on ZnO nanostructures (NSs) applied to resistive-type H₂ gas sensor with micro-length in sensing channel. The ZnO NSs were selectively grown between micro-size finger-like interdigital electrodes through microelectromechanical technology. The novel H₂ sensor structure with the sensing channel was reduced to micro-size by this proposed method to obtain a sensor with fast response/recovery time. The as-prepared structure exhibited robust sensing performance with a response of 11% at optimal temperature of 150 °C, good linearity, and fast response/recovery time within 10 s. The speed of chemisorption through the diffusion pathway in Pd NCs combined with micro-length in sensing channel in sensor showed fast response and recovery times of 9 and 15 s, respectively, toward 10,000 ppm (1%) H₂ at 150 °C. The result showed approximate linearity response in H₂ concentration range of 5÷10,000 ppm and a large operating temperature range from room temperature to 200 °C.The design of sensitive and efficient photo catalyst for the energy and environmental applications with minimum charge recombination rate and excellent photo conversion efficiency is a challenging task. Herein we have developed a nonmetal doping methodology into ZnO crystal using simple solvothermal approach. The boron (B) is induced into ZnO. The doping of B did not make any significant change on the morphology of ZnO nano rods as confirmed by scanning electron microscopy (SEM) without considerable change on periodic arrangement of nanostructures. The existence of B, Zn, and O is shown by energy dispersive spectroscopy (EDS). The X-ray diffraction (XRD) patterns are well matched to the hexagonal phase for both pristine ZnO and B-doped ZnO. The XRD has shown slight dislocation of 2theta degree. The UV-visible spectroscopy was used to measure the optical bandgap and photo catalytic activity for the degradation of organic dyes. The nonmetal doped ZnO has shown potential and outstanding photo catalytic activity for the photo degradation of methylene blue (MB), methyl orange (MO) and rhodamine B in aqueous solution. The photo degradation efficiency of MB, MO and rhodamine B is found to be 96%, 86% and 80% respectively. The enhanced photo catalytic activity of B-doped ZnO is indexed to the inhibited charge recombination rate due to the reduction in the optical bandgap. Based on the obtained results, it can be said that nonmetal doping is excellent provision for the design of active materials for the extended range of applications.An overview is given of the many applications that nm-thin pure boron (PureB) layers can have when deposited on semiconductors such as Si, Ge, and GaN. The application that has been researched in most detail is the fabrication of nm-shallow p+n-like Si diode junctions that are both electrically and chemically very robust. They are presently used commercially in photodiode detectors for extremeultraviolet (EUV) lithography and scanning-electron-microscopy (SEM) systems. By using chemicalvapor deposition (CVD) or molecular beam epitaxy (MBE) to deposit the B, PureB diodes have been fabricated at temperatures from an optimal 700 °C to as low as 50 °C, making them both front- and back-end-of-line CMOS compatible. On Ge, near-ideal p+n-like diodes were fabricated by covering a wetting layer of Ga with a PureB capping layer (PureGaB). For GaN high electron mobility transistors (HEMTs), an Al-on-PureB gate stack was developed that promises to be a robust alternative to the conventional Ni-Au gates. see more In MEMS processing, PureB is a resilient nm-thin masking layer for Si micromachining with tetramethyl ammonium hydroxide (TMAH) or potassium hydroxide (KOH), and low-stress PureB membranes have also been demonstrated.Here we discuss the aerosol-assisted synthesis of p-n heterojunction metal oxides and we report their gas sensing properties via a short review of the latest results achieved. In particular, we show that the decoration of one-dimensional tungsten oxide (n-type) with nanoparticles of different p-type oxides from transition metals such as Ni, Co or Ir enables achieving a chemical and electronic sensitization of the resulting hybrid metal oxide materials. This leads to remarkable differences in responsiveness to gases, showing that, to some extent, a selective detection of some major pollutant gases (NO₂, H₂S or NH₃) would be possible. Results are critically reviewed, shortcomings are identified and future research directions are given.In the present manuscript the authors show the progress recorded regarding the main synthesis methods of metal endo-fullerenes. Shown, that nowadays, the most productive and common method of producing endohedral fullerenes is the electric arc process due to the fact that (a) it is simple enough to introduce atoms into the plasma from solids and gases; (b) its performance is the highest among other methods; (c) gives a wide range of produced types of metallofullerenes in an inert atmosphere-mono-, di-, tri-metalfullerenes, metal carbide clusters, in a reactive atmosphere (N₂, NH₃)-metal nitride and cyanide clusters, heterofullerenes; (d) provides the greatest energy potential, which is likely to allow the introduction into the cells of fullerene molecules metal atoms with higher ionization energies than titanium (≥7 eV). The yield of metal endofullerenes is substantially higher than the "empty" fullerenes. In this case, the stabilization of both metal atoms and fullerene cells occurs. The quantitative and qualitative output of MEF is significantly affected by (a) conditions of the process in the reactor the gas pressure, its flow rate, temperature, amperage; the distance between the electrodes, and others, that is, those factors that determine the plasma temperature and the residence time of the reaction particles in it; (b) the composition of solid additives (salts, oxides, metal alloys) in the graphite anode and their quantitative (mol) ratio with carbon; (c) replacement of the inert atmosphere of the synthesis with the active one (helium-with nitrogen, ammonia, water vapor, CO and other gases).