Blumblankenship1383

83dB functions as a SSC that converts the MFD from 4.7 μm to 7.5 μm at 1550-nm wavelength.Full Stokes imaging can be performed with a continuously rotating retarder in front of a fixed polarizer and a standard camera (RRFP) or a division of a focal plane polarization camera (RRDOFP). XAV-939 supplier We determine the optimal number and duration of intensity measurements through a cycle of the retarder for these two types of setups as a function of instrument and noise parameters. We show that this number mainly depends on the type of noise that corrupts the measurements. We also show that with these setups, the starting angle of the retarder need not be known precisely and can be autocalibrated, which facilitates synchronization of the rotating retarder with the camera. We investigate the precision and feasibility domain of this autocalibration and show the RRDOFP setup has more attractive properties compared with RRFP setup. These results are important to optimize and facilitate the operation of polarization imagers based on a rotating retarder.The discovery of single structure Ce3+ doped garnet transparent ceramics (TCs) with a broad full width at half maximum (FWHM) is essential to realize a high CRI for high-power white light emitting diodes (LEDs) and laser diodes (LDs). In this work, by utilizing the ion substitution engineering strategy, pure phase Gd3Sc2Al3O12Ce3+ (GSAGCe) TC with a broad FWHM of 132.4 nm and a high CRI value of 80.7 was fabricated through the vacuum sintering technique for the first time. The optimized in-line transmittance of TCs was 58.4% @ 800 nm. Notably, the GSAGCe TCs exhibited a remarkable red shift from 546 nm to 582 nm, with a high internal quantum efficiency (IQE) of 46.91%. The degraded thermal stability in CeGSAG TCs was observed compared with that of CeYAG TC, owing to the narrowed band gap of GSAG. Additionally, remote excitation white LEDs/LDs were constructed by combining GSAGCe TCs with blue LED chips or laser sources. A tunable color hue from yellow to shinning white was achieved in white LEDs, whereas the acquired CRI and CCT of the white LDs were 69.5 and 7766 K, respectively. This work provides a new perspective to develop TCs with high CRI for their real applications in high-power white LEDs/LDs.We report the spatiotemporal mode-locked multimode fiber laser operating at 1.55 µm based on semiconductor saturable absorber mirrors with the mode-locking threshold as low as 104 mW. Benefiting from the multimode interference filtering effect introduced in the laser cavity not only the central wavelength can be continuously tuned from 1557 nm to 1567 nm, but also the number of the output pulses can be adjusted from 1 to 4 by simply adjusting the polarization controllers. This work provides a new platform for exploring the dynamic characteristics of spatiotemporal mode-locked pulses at negative dispersion regime. Moreover, this kind of tunable laser has potential applications in fields of all-optical signal processing, fiber sensing and information coding.Regulating nonlinear optical (NLO) absorption and refraction properties of graphene is significant in nonlinear photonics. In this work, the functionalizing strategy of quantum dots (QDs) was used for the regulation of the NLO properties of reduced graphene oxide (rGO) with Au nanospheres and Au@CdS core-shells. The third-order NLO properties of rGO-Au and rGO-Au@CdS nanocomposites were investigated by Z-scan technique with 38 ps laser pulses at 532 nm wavelength. The saturation absorption (SA) of rGO was weakened when it was combined with Au nanospheres and switched to reverse saturation absorption (RSA) when combined with Au@CdS core-shells as irradiance intensity increased. The strength of RSA was tunable with the size of Au@CdS core-shells. Meanwhile, the nonlinear susceptibility of rGO was weakened with the complex Au but was tunable with the complex Au@CdS and realized two times enhancement. The effect of charge transfer mechanism was proposed to explain the regulated effect.We propose a high-performance reflection-type augmented reality (AR) 3D display by using a reflective polarizer (RP). The RP functions as a reflective imaging device as well as an image combiner that combines the real scenes and the 3D images reconstructed by the integral imaging display unit. Benefiting from the flawless imaging of the RP, the proposed reflection-type AR system can achieve high-definition 3D display. A prototype based on the proposed reflection-type AR structure is developed, and it presents good 3D display effects and reflection-type AR performances. The developed prototype is very compact, as thin as 3.4 mm, which makes it be a potential candidate in stomatology and vehicle AR display.A focus calibration method is developed to determine the focus position of a grating alignment system. An illumination beam scanning module is utilized to generate a circular motion for the beam, which forms an angular modulation interference image on the reference mark. A theoretical model is presented to determine the focus by determining the alignment grating z-position, at which the alignment offset is independent of the incident beam tilt. The standard uncertainty of the focus calibration results is estimated to be better than 150 nm. This technique may improve the measurement performance for lithography systems and precision machine applications.Layered two-dimensional (2D) materials with broadband photodetection capability have tremendous potential in the design and engineering of future optoelectronics devices. To date, studies of 2D semiconductors are actively focused on graphene, black phosphorus, and black arsenic phosphorus as attractive candidates. So far, however, novel group IV-V 2D semiconductors (e.g., GeAs and SiAs) have not been extensively explored for broad-band optoelectronics applications. Here, we report a high-performance multilayered 2D GeP gate-tunable photodetector that operates at a short-wavelength infrared (SWIR) regime. With a back-gate device geometry, a p-type behavior is observed at room temperature. Furthermore, a broadband spectral response from UV to optical communication wavelengths is detected. Under a nanowatt-level illumination, a peak responsivity of 25.5 A/W at λ = 1310 nm is achieved with detectivity of ∼ 1×1011 cm.Hz1/2.W-1 at a source-drain bias of -5 V and medium gate voltage bias of -30 V. Additionally, the devices show a relatively low dark current of 40-250 nA for device area in the range of 50-600 µm2 and excellent stability and reproducibility.