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Herein we present the catalytic activation of N2O at a BiI⇄BiIII redox platform. The activation of such a kinetically inert molecule was achieved by the use of bismuthinidene catalysts, aided by HBpin as reducing agent. The protocol features remarkably mild conditions (25 °C, 1 bar N2O), together with high turnover numbers (TON, up to 6700) and turnover frequencies (TOF). Analysis of the elementary steps enabled structural characterization of catalytically relevant intermediates after O-insertion, namely a rare arylbismuth oxo dimer and a unique monomeric arylbismuth hydroxide. This protocol represents a distinctive example of a main-group redox cycling for the catalytic activation of N2O.Neuroinflammation is indicated in the pathogenesis of several acute and chronic neurological disorders. Acute lesions in the brain parenchyma induce intense and highly complex neuroinflammatory reactions with similar mechanisms among various disease prototypes. Temsirolimus price Microglial cells in the CNS sense tissue damage and initiate inflammatory responses. The cellular and humoral constituents of the neuroinflammatory reaction to brain injury contribute significantly to secondary brain damage and neurodegeneration. Inflammatory cascades such as proinflammatory cytokines from invading leukocytes and direct cell-mediated cytotoxicity between lymphocytes and neurons are known to cause "collateral damage" in models of acute brain injury. In addition to degeneration and neuronal cell loss, there are secondary inflammatory mechanisms that modulate neuronal activity and affect neuroinflammation which can even be detected at the behavioral level. Hence, several of health conditions result from these pathogenetic conditions which are underlined by progressive neuronal function loss due to chronic inflammation and oxidative stress. In the first part of this Review, we discuss critical neuroinflammatory mediators and their pathways in detail. In the second part, we review the phytochemicals which are considered as potential therapeutic molecules for treating neurodegenerative diseases with an inflammatory component.This article describes a process of fabricating highly porous paper from cellulosic fibers and carbon black (CB) with tunable conductivity. By embossing such paper, its porosity decreases while its conductivity increases. Tuning the porosity of composite paper alters the magnitude and trend of conductivity over a spectrum of concentrations of conductive particles. The largest increase in conductivity from 8.38 × 10-6 to 2.5 × 10-3 S/m by a factor of ∼300 occurred at a percolation threshold of 3.8 wt % (or 0.36 vol %) with the composite paper plastically compressed by 410 MPa, which caused a decrease of porosity from 88% to 42% on average. Our composite paper showed stable piezoresistive responses within a broad pressure range from 1 kPa up to 5.5 MPa for 800 cycles. The piezoresistive sensitivities of the composite paper were dependent on concentration and decreased with pressure. Composite paper with 7.5 wt % CB had sensitivities of -0.514 kPa-1 over applied pressures ranging from 1 to 50 kPa and -0.215 kPa-1 from 1 to 250 kPa. This piezoresistive paper with embossed patterns enabled touch sensing and detection of damage from darts and punches. Understanding the percolation behavior of three-phase composites (cellulosic fibers/conductive particles/air) and their response to damage, pressure, and processing conditions has the potential to enable scalable applications in prosthetics and robotics, haptic feedback, or structural health monitoring on expansive surfaces of buildings and vehicles.A copper-catalyzed enantioconvergent Suzuki-Miyaura C(sp3)-C(sp2) cross-coupling of various racemic alkyl halides with organoboronate esters has been established in high enantioselectivity. Critical to the success is the use of a chiral cinchona alkaloid-derived N,N,P-ligand for not only enhancing the reducing capability of copper catalyst to favor a stereoablative radical pathway over a stereospecific SN2-type process but also providing an ideal chiral environment to achieve the challenging enantiocontrol over the highly reactive radical species. The reaction has a broad scope with respect to both coupling partners, covering aryl- and heteroarylboronate esters, as well as benzyl-, heterobenzyl-, and propargyl bromides and chlorides with good functional group compatibility. Thus, it provides expedient access toward a range of useful enantioenriched skeletons featuring chiral tertiary benzylic stereocenters.Li metal is considered a highly desirable anode for next-generation high-energy-density rechargeable lithium batteries. However, irregular Li dendrite formation and infinite relative volume changes prevent the commercial adoption of Li-metal anodes. Here, electrophoretic deposition of black phosphorus (BP) on commercial Cu foam (BP@Cu foam) is reported to regulate Li nucleation for the first time. First-principles calculations reveal that the unique two-dimensional (2D) structure of BP is beneficial to Li intercalation and propagation. Compared with the random Li nucleation and growth on bare Cu foam, Li ions are preferably confined into the BP layers, which induces uniform Li nucleation at the early stage of the Li deposition and guides the following lateral Li growth on BP@Cu foam. In addition, the three-dimensional (3D) porous and conductive framework of Cu foams further mitigate the volume change and dissipate the current density. Attributing to these merits, the BP@Cu foam exhibits significantly enhanced Coulombic efficiency and cycling stability compared with bare Cu foam. In the full-cell configuration paired with a Li4Ti5O12 or LiFePO4 cathode, the BP@Cu foam also boosts the battery performances. This work provides new insights into the development of BP and other elaborate 2D materials for achieving dendrite-free Li-metal anodes.Van der Waals heterostructures are the ideal material platform for tunnel field-effect transistors (TFETs) because a band-to-band tunneling (BTBT) dominant current is feasible at room temperature (RT) because of ideal, dangling bond-free heterointerfaces. However, achieving subthreshold swing (SS) values lower than 60 mV dec-1 of the Boltzmann limit is still challenging. In this work, we systematically studied the band alignment and heterointerface quality in n-MoS2 channel heterostructure TFETs. By selecting a p+-MoS2 source with a sufficiently high doping level, stable gate modulation to a type III band alignment was achieved regardless of the number of MoS2 channel layers. For the gate stack formation, it was found that the deposition of Al2O3 as the top gate introduces defect states for the generation current under reverse bias, while the integration of a hexagonal boron nitride (h-BN) top gate provides a defect-free, clean interface, resulting in the BTBT dominant current even at RT. All 2D heterostructure TFETs produced by combining the type III n-MoS2/p+-MoS2 heterostructure with the h-BN top-gate insulator resulted in low SS values at RT.