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The current research proposes to incorporate vocational interests into the study of adverse impact (i.e., differential hiring/selection rates between minority and majority groups in employment settings). In the context of high stakes testing (e.g., using cognitive and personality tests), we show how race gaps in vocational interests would correspond to differential rates of job attraction (the attraction process) and various personnel selection outcomes (the selection process), in patterns that are not always intuitive. Using findings from various meta-analyses, we construct a combined correlation matrix of race, vocational interests, cognitive ability, and Conscientiousness; and provide mathematical formulas to assess the role of vocational interests in determining subgroup differences on predictors in applicant pools. Results and empirical examples suggest (a) applicant attraction based on vocational interests can reduce adverse impact potential when the interest favors the minority [majority] group and is negatively [positively] related to the predictor; (b) attraction effects of vocational interests on adverse impact potential are modest; (c) if the vocational interest subgroup mean difference is small relative to other predictors in use, personnel selection on the interest will reduce adverse impact potential; (d) attraction effects tend to dampen or remove the selection effects of vocational interests on adverse impact potential, due to variance restriction on interests in the applicant pool; and (e) selection effects tend to be much stronger than attraction effects. These findings have implications for how adverse impact might differ systematically across job types, partly due to attraction and selection effects involving race differences in vocational interests. (PsycInfo Database Record (c) 2021 APA, all rights reserved).Total synthesis of the pentasaccharide repeating unit of the OPS from Halomonas ventosae RU5S2EL is accomplished through a [3+2] block strategy. Picoloyl-induced hydrogen-bond-assisted aglycon delivery (HAD) is used for two consecutive 1,2-cis-l-rhamnosylations, and remote participation is used for α-selective glucosylation. The choice of 2-aminoethyl glycoside at the reducing end is opted for, leaving the scope for further glycoconjugate formation without hampering the reducing-end stereochemistry.This study explores the synthesis of cyclic cis-vicinal phenyl ethylenes from oxotriphenylhexanoates. The reaction is a BBr3-promoted cyclization of 1,6-ketoesters (1) to five-membered diketo compounds (2). The synthesis is interesting as it constitutes one of the few examples of modular stereoselective synthesis of structures with a cis-oriented vicinal diphenylethylene. The core structure of 2 can be smoothly derivatized, which makes it a promising synthetic building block for further stereoselective synthetic applications.Amines are widely employed as additives for improving the performance of metal halide perovskite optoelectronic devices. However, amines are well-known for their high chemical reactivity, the impact of which has yet to receive enough attention from the perovskite light-emitting diode community. Here, by investigating an unusual positive aging effect of CH3NH3I/CsI/PbI2 precursor solutions as an example, we reveal that amines gradually undergo N-formylation in perovskite precursors over time. This reaction is initialized by hydrolysis of dimethylformamide in the acidic chemical environment. Further investigations suggest that the reaction products collectively impact perovskite crystallization and eventually lead to significantly enhanced external quantum efficiency values, increasing from ∼2% for fresh solutions to ≳12% for aged ones. While this case study provides a positive aging effect, a negative aging effect is possible in other perovksite systems. Our findings pave the way for more reliable and reproducible device fabrication and call for further attention to underlying chemical reactions within the perovskite inks once amine additives are included.Time-dependent density functional theory (TDDFT) simulations are conducted on a series of chiral gold nanowires to explore whether an enhancement of circular dichroism at the plasmon resonance is possible and identify its quantum-mechanical origin. We find that in linear two-dimensional chiral nanowires the dichroic response is suppressed by destructive interference of nearly degenerate components with opposite signs, pointing to this phenomenon as a common and likely origin of the difficulty encountered so far in achieving a plasmonic CD response in experiment and suggesting nevertheless that these opposite components could be "decoupled" by using multiwall arrangements. In contrast, we predict a giant dichroic response for nanowires with three-dimensional helical coiling. We rationalize this finding via an electronic structure analysis of longitudinal and transversal plasmonic excitations and their coupling into chiral components, and we propose a simple formula for the chiral response as a function of structural parameters (nanowire length and coiling number).Dislocations often exhibit unique physical properties distinct from those of the bulk material. However, functional applications of dislocations are challenging due to difficulties in the construction of high-performance devices of dislocations. Here we demonstrate unidirectional single-dislocation Schottky diode arrays in a Fe2O3 thin film on Nb-doped SrTiO3 substrates. Conductivity measurements using conductive atomic force microscopy indicate that a net current will flow through individual dislocation Schottky diodes under forward bias and disappear under reverse bias. Under cyclic bias voltages, the single-dislocation Schottky diodes exhibit a distinct resistive switching behavior containing low-resistance and high-resistance states with a high resistance ratio of ∼103. Selleckchem mTOR inhibitor A combined study of transmission electron microscopy and first-principles calculations reveals that the Fe2O3 dislocations comprise mixed Fe2+ and Fe3+ ions due to O deficiency and exhibit a one-dimensional electrical conductivity. The single-dislocation Schottky diodes may find applications for developing ultrahigh-density electronic and memory devices.