Hofigueroa2515

This study aimed to evaluate clinicopathological characteristics and long-term oncological outcome with respect to mucinous histology of tumor in colorectal cancer (CRC) patients.

A total of 372 patients who underwent resection surgery due to CRC between March 2006 and March 2019 were included in this retrospective study. Patients were divided into two groups according to degree of mucinous component including mucinous carcinoma group (n=48, ≥50% mucinous component) and non-mucinous carcinoma (n=324, <50% mucinous component) group. Data on patient demographics, tumor characteristics, treatment characteristics, metastasis and recurrence rates, disease free survival (DFS), and overall survival (OS) times were recorded.

Mucinous vs. non-mucinous carcinoma was associated with higher rate of T4 stage (p=0.036) and high grade tumors (p=0.001) with extranodal invasion (p=0.019) Both the OS time (75.9±13.1 vs. 110.8±5.6 months, p=0.019) and DFS time (98.5±15.6 vs. 140.5±5.1 months, p=0.003) were significantly shorter in colon cancer patients with vs. without mucinous carcinoma despite their higher likelihood of receiving chemotherapy (89.6 vs. 71.9%, p=0.009). Multivariate analysis revealed presence of perineural invasion (HR 1.865, p=0.002), extranodal invasion (HR 1.869, p=0.009), T4 stage (HR 1.617, p=0.019), and M1 stage tumors (HR 3.643, p<0.001) but not mucinous carcinoma to significantly predict poor survival in CRC patients.

In conclusion, our findings indicate colorectal tumors with mucinous carcinoma histology to have a more aggressive tumor characteristics and advanced disease stage on admission in CRC patients as well as shorter OS time and DFS time specifically in colon cancer patients despite receiving chemotherapy.

Chemotherapy, Colorectal cancer, Long-term follow up, Mucinous histology, Survival.

Chemotherapy, Colorectal cancer, Long-term follow up, Mucinous histology, Survival.Constructing sulfur hosts with high electronic conductivity, large void space, strong chemisorption, and rapid redox kinetics is critically important for their practical applications in lithium-sulfur batteries (LSBs). Herein, by coupling ZnS quantum dots (QDs) with carbon nanotubes (CNTs), one multifunctional sulfur host CNT/ZnS-QDs is designed via a facile one-step hydrothermal method. SEM and TEM analyses reveal that small ZnS-QDs ( less then 5 nm) are uniformly anchored on the CNT surface as well as encapsulated into CNT channels. This special architecture ensures sulfur direct contacting with highly conductive CNTs; meanwhile, the catalytic effect of anchored ZnS-QDs improves the chemisorption and confinement to polysulfides. Benefiting from these merits, when used as sulfur hosts, this special architecture manifests a high specific capacity, superior rate capability, and long-term cycling stability. The ZnS-QDs dependent electrochemical performance is also evaluated by adjusting the mass ratio of ZnS-QDs, and the host of CNT/ZnS-QDs 27% owns the optimal cell performance. The specific capacity decreases from 1051 mAh g-1 at 0.2 C to 544 mAh g-1 at 2.0 C, showing rate capability much higher than CNT/S and other CNT/ZnS-QDs/S samples. After 150 cycles, the cyclic capacity at 0.5 C exhibits a slow reduction from 1051 mAh g-1 to 771 mAh g-1, showing a high retention of 73.4% with a coulombic efficiency of over 99%. The electrochemical impedance spectroscopy analyses demonstrate that this special architecture juggles high conductivity and excellent confinement of polysulfides, which can significantly suppress the notorious shuttle effect and accelerate the redox kinetics. #link# The strategy in this study provides a feasible approach to design efficient sulfur hosts for realizing practically usable LSBs.Phonons play a fundamental role in the electronic and thermal transport of 2D materials which is crucial for device applications. In this work, we investigate the temperature-dependence of A[Formula see text] and A[Formula see text] Raman modes of suspended and supported mechanically exfoliated few-layer gallium sulfide (GaS), accessing their relevant thermodynamic Grüneisen parameters and anharmonicity. The Raman frequencies of these two phonons soften with increasing temperature with different [Formula see text] temperature coefficients. The first-order temperature coefficients θ of A[Formula see text] mode is ∼ -0.016 cm-1/K, independent of the number of layers and the support. In contrast, the θ of A[Formula see text] mode is smaller for two-layer GaS and constant for thicker samples (∼ -0.006 2 cm-1 K-1). Furthermore, for two-layer GaS, the θ value is ∼ -0.004 4 cm-1 K-1 for the supported sample, while it is even smaller for the suspended one (∼ -0.002 9 cm-1 K-1). The higher θ value for supported and thicker samples was attributed to the increase in phonon anharmonicity induced by the substrate surface roughness and Umklapp phonon scattering. Our results shed new light on the influence of the substrate and number of layers on the thermal properties of few-layer GaS, which are fundamental for developing atomically-thin GaS electronic devices.Solution processing of amorphous oxide semiconductors (AOS) is used for electronic and optoelectronic applications. However, the device performance is much lower than that for a device that is fabricated using vacuum processing. This study uses acetylacetone (acac) as an additive in the precursor solution to reduce the nanocluster size in a ZnSnO (ZTO) film. A metal-semiconductor-metal (MSM)-type UV photodetector (PD) is fabricated using as-prepared ZTO film. ZTO film that features a smaller nanocluster size, so more oxygen vacancies are induced, which produces more electrons and the photocurrent is increased. The surface at the metal/semiconductor interface is smoother so there is greater contact with fewer interface states and the dark current is decreased. An extremely high photo-to-dark current ratio (PDCR) of 1314 is achieved for a solution-processed ZTO MSM-type PD.The structural, magnetic and dielectric properties have been investigated in 3d-5d based double perovskite Sr2FeIrO6 thin films deposited by pulse laser deposition technique. To understand the effect of strain, epitaxial films are grown with varying thickness as well as on different substrates i.e., SrTiO3 (100) and LaAlO3 (100). The films with highest thickness are found to be more relaxed. Atomic force microscope images indicate all films are of good quality where grain sizes increase with increase in film thickness. X-ray absorption (XAS) spectroscopy measurements indicate a Ir5+ charge state in present films while providing a detailed picture of hybridization between Fe/Ir-d and O-p orbitals. Ceritinib is retained in films though the transition temperature shifts to higher temperature. Both dielectric constant (ϵ r) and loss (tan  δ) show change around the magnetic ordering temperatures of bulk Sr2FeIrO6 indicating a close relation between dielectric and magnetic behaviors. A Maxwell-Wagner type relaxation is found to follow over whole frequency range down to low temperature in present film. On changing the substrate i.e., LaAlO3 (100), the ϵ r(T) and (tan  δ(T)) show almost similar behavior but ϵ r shows a higher value which is due to an increased strain coming from high mismatch of lattice parameters.We investigate, firstly, the competition between the Rashba spin-orbit coupling (SOC) and the intrinsic SOC in Kane-Mele model. link2 For the small intrinsic SOC, we investigate the effects of the Rashba SOC on the touching point of the valence and conduction bands when the ratio of the Rashba SOC to the intrinsic SOC is greater than classical value [Formula see text]. For the large intrinsic SOC, we find that the critical ratio of the two SOCs at which the band touching occurs decreases with the increasing intrinsic SOC and the locations of these touching points deviate from points K and K' of the Brillouin zone. Furthermore, effects of the Rashba SOC on these touching points are discussed in detail when the ratio is greater than the critical value. The Rashba SOC-driven topologically trivial and non-trivial transitions are also obtained in the first part of the work. Secondly, using the slave-rotor mean field method we investigate the influences of the correlation on the Rashba SOC-driven topologically trivial and non-trivial transitions in both the charge condensate and Mott regions. The topological Mott insulator with gapped or gapless spin excitations which arises from the interplay of the Rashba SOC and correlations is obtained in the work.The telecommunication wavelength of λ = 1.5 μm has been playing an important role in various fields. link3 In particular, performing photodetection at this wavelength is challenging, demanding more performance stability and lower manufacturing cost. In this work, upconversion nanoparticle (UCNP)/Si hybrid photodetectors (hybrid PDs) are presented, made by integrating solution-processed Er3+-doped NaYF4 upconversion nanoparticles (UCNPs) onto a silicon photodetector. After optimization, we demonstrated that a layer of UCNPs can well lead to an effective spectral sensitivity extension without sacrificing the photodetection performance of the Si photodetector in the visible and near-infrared (near-IR) spectrum. Under λ = 1.5 μm illumination, the hybrid UCNPs/Si-PD exhibits a room-temperature detectivity of 6.15 × 1012 Jones and a response speed of 0.4 ms. These UCNPs/Si-PDs represent a promising hybrid strategy in the quest for low-cost and broadband photodetection that is sensitive in the spectrum from visible light down to the short-wave infrared.Symmetric droplet-etched quantum dots (QDs) are the leading candidate for generating high-performance polarization-entangled photon pairs. One of the challenges is how to precisely engineer the properties of QDs by controlling the morphology of etched nanoholes. In this paper, we systematically investigate the influence of the underlying material, showing the morphological evolution of the nanohole structure as well as symmetric GaAs QDs with an average fine-structure splitting (FSS) of (5.9 ± 1.2) μeV. Moreover, we develop a theoretical model that quantitatively reproduces the experimental data and provides insights into the mechanisms governing the relationship between the anisotropy of nanoholes in the [Formula see text] crystallographic direction and the growth parameters. Our theoretical analysis also indicates how to improve the symmetry of nanoholes to meet the requirements for implementing QDs in entangled photon sources.Carbon dioxide electrochemical reduction reaction (CO2RR) under ambient conditions provides an intriguing picture for conversion of CO2 to useful fuels and chemicals. Here by means of density functional theory (DFT) computations, the formation configuration and CO2RR catalytic activity of boron nitrogen cluster-doped graphdiyne (BN-doped GDY) were systematically investigated. The band structure and optical adsorption spectra reveal that BN-doped GDY exhibits semiconductor with the band gap of 0.902 eV and shows photothermal effect under visible and even infrared light irradiation. The BN-doped GDY could act as a hot spot to enhance CO2RR. The adsorption configurations of various reaction intermediates indicate that boron atoms are active sites, which can be further confirmed by charge analysis. Based on thermodynamic analysis, the reaction pathways and onset potentials were studied as compared with Cu(111) surface. For the production of CO, the onset potential for BN-doped GDY (-1.06 V) is higher than that for Cu(111) surface.