Bloombenton8636

The electrical and optical improvements of AlGaInP micro-light-emitting diodes (µLEDs) using atomic-layer deposition (ALD) sidewall passivation were demonstrated. Due to the high surface recombination velocity and minority carrier diffusion length of the AlGaInP material system, devices without sidewall passivation suffered from high leakage and severe drop in external quantum efficiency (EQE). By employing ALD sidewall treatments, the 20×20 µm2 µLEDs resulted in greater light output power, size-independent leakage current density, and lower ideality factor. The forward current-voltage characteristic was enhanced by using surface pretreatment. Furthermore, ALD sidewall treatments recovered the EQE of the 20×20 µm2 devices more than 150%. This indicated that AlGaInP µLEDs with ALD sidewall treatments can be used as the red emitter for full-color µLED display applications.An iterative local Fourier transform (ILFT)-based high-accuracy wavelength calibration for Fourier transform imaging spectrometer (FTIS) is proposed. The wavelength calibration for FTIS is to determine the relation between the wavelength and the wavenumber position. However, the wavenumber position solved by conventional method is only accurate up to integers restricted by the picket-fence effect of discrete Fourier transform. While the proposed ILFT can increase the accuracy of calculating the wavenumber position by combining the local Fourier transform and a few iterations. In this paper, the method is investigated in theory and then by simulations and experiments. The simulations show that the accuracy of the wavenumber position calculated by the ILFT is increased by 100 times than conventional method with noise, phase error, and non-uniform sampling of optical path difference. And the experimental results indicate that the ILFT decreases the absolute error of wavelength calibration from about 2.03 nm to 0.16 nm. Therefore, the method provides theoretical and technical support for FTIS and promotes the development of superior resolutions therein.In laser lighting, a major benefit over other lighting techniques is the possibility to achieve very high luminous exitance. Focusing the exciting laser to a very small spot size on the phosphor, however, does not necessarily provide a very small emitting area for the white light. In this study we investigate experimentally and numerically the relationship between the white light spot size and the incident blue laser spot size. We show that the specific phosphor material properties have significant impact on this relationship and on the achievable minimum spot size. This constitutes a limitation on the minimum spot size achievable in laser lighting and has important implications in applications.Low loss, single mode, Ge-on-Si rib waveguides are used to demonstrated optical sensing in the molecular fingerprint region of the mid-infrared spectrum. Sensing is carried out using two spin-coated films, with strong absorption in the mid-infrared. These films are used to calibrate the modal overlap with an analyte, and therefore experimentally demonstrate the potential for Ge-on-Si waveguides for mid-infrared sensing applications. The results are compared to Fourier transform infrared spectroscopy measurements. The advantage of waveguide spectroscopy is demonstrated in terms of the increased optical interaction, and a new multi-path length approach is demonstrated to improve the dynamic range, which is not possible with conventional FTIR or attenuated total reflection (ATR) measurements. These results highlight the potential for Ge-on-Si as an integrated sensing platform for healthcare, pollution monitoring and defence applications.We report a high-average-power mid-infrared picosecond (ps) optical parametric oscillator (OPO) based on orientation-patterned gallium arsenide (OP-GaAs), with wide wavelength tunability. The OP-GaAs OPO is synchronously pumped by a thulium-doped-fiber (TDF) master oscillator power amplifier (MOPA), seeded by a gain-switched laser diode. At a pump power of 35.3 W and a repetition rate of 100 MHz, a maximum OPO total average output power of 9.7 W (signal 5.7 W (0.60 kW peak power), idler 4.0 W (0.42 kW peak power)) is obtained at signal and idler wavelengths of 3093 nm and 5598 nm, and a thermally induced power roll-off is observed. Decitabine ic50 To mitigate the thermal effects, an optical chopper is placed before the OPO to provide burst mode operation and a reduced thermal load. We achieved a linear growth in OPO output power over the full range of available pump powers in this instance confirming thermal effects as the origin of the roll-off observed under continuous pumping. We estimate the maximum peak powers of the signal and idler are estimated to be over 0.79 kW and 0.58 kW, respectively in this instance. A wide mid-infrared wavelength tuning range of 2895-3342 nm (signal) and 4935-6389 nm (idler) is demonstrated.Enhancement in the light interaction between plasmonic nanoparticles (NPs) and semiconductors is a promising way to enhance the performance of optoelectronic devices beyond the conventional limit. In this work, we demonstrated improved performance of Ga2O3 solar-blind photodetectors (PDs) by the decoration of Rh metal nanoparticles (NPs). Integrated with Rh NPs on oxidized Ga2O3 surface, the resultant device exhibits a reduced dark current of about 10 pA, an obvious enhancement in peak responsivity of 2.76 A/W at around 255 nm, relatively fast response and recovery decay times of 1.76 ms/0.80 ms and thus a high detectivity of ∼1013 Jones. Simultaneously, the photoresponsivity above 290 nm wavelength decreases significantly with improved rejection ratio between ultraviolet A (UVA) and ultraviolet B (UVB) regions, indicative of enhanced wavelength detecting selectivity. The plasmonic resonance features observed in transmittance spectra are consistent with the finite difference time-domain (FDTD) calculations. This agreement indicates that the enhanced electric field strength induced by the localized surface plasmon resonance is responsible for the enhanced absorption and photoresponsivity. The formed localized Schottky barrier at the interface of Rh/Ga2O3 will deplete the carriers at the Ga2O3 surface and lead to the remarkable reduced dark current and thus improve the detectivity. These findings provide direct evidence for Rh plasmonic enhancement in solar-blind spectral region, offering an alternative pathway for the rational design of high-performance solar-blind PDs.