Hartalstrup8403

Through analysis of the temporal trend (1984-2019) in SDD and SPM, this study demonstrated that variation in SPM concentration was the dominant driver (explaining 63% of the variation as opposed to 2% due to solar radiation) of SDD in Lake Khanka, thus supporting the study hypothesis. Furthermore, we speculated that variation in wind speed, probably impacted by difference in temperature between lake surface and surrounding landscapes (greater difference between 1984-2009 than after 2010), may have caused varying degree of sediment resuspension, ultimately controlling SPM and SDD variation in Lake Khanka.In this work, the radiation responses of silicon photonic passive devices built in silicon-on-insulator (SOI) technology are investigated through high energy neutron and 60Co γ-ray irradiation. The wavelengths of both micro-ring resonators (MRRs) and Mach-Zehnder interferometers (MZIs) exhibit blue shifts after high-energy neutron irradiation to a fluence of 1×1012 n/cm2; the blue shift is smaller in MZI devices than in MRRs due to different waveguide widths. Devices with SiO2 upper cladding layer show strong tolerance to irradiation. Neutron irradiation leads to slight changes in the crystal symmetry in the Si cores of the optical devices and accelerated oxidization for devices without SiO2 cladding. A 2-µm top cladding of SiO2 layer significantly improves the radiation tolerance of these passive photonic devices.Dual-comb LiDARs have the potential to perform high-resolution ranging at high speed. Here, through an implementation involving electro-optic modulators and heterodyne detection, we quantify the ranging systems trade-off between precision and non-ambiguity range (NAR) using a unique performance factor. We highlight the influence of the comb amplitude envelope on the precision with a distance measurement limited by the repetition rate of the optical comb. The influence of the combs repetition rate on the NAR and on the precision is illustrated through a setup allowing distance measurement with a tunable NAR. Finally, we demonstrate the impossibility to resolve different targets, quantify the impact on the measured distance and develop on the conditions in which non-linear effects of the interference make the measurement impossible.Recent years have seen an unprecedented growth of data traffic driven by a continuous increase of connected devices and new applications. This trend will tend to saturate transparent optical networks that are the backbone of the whole telecommunication infrastructure. To improve the capacity of already deployed network infrastructures and maximize operators CAPEX returns, band-division multiplexing (BDM) has emerged as a promising solution to expand the fiber bandwidth beyond the existing C-band. Along with this, the demand for flexible and dynamically reconfigurable functionalities in each network layer is increasing. In this regard, optical networking is fast evolving towards the applications of the software-defined networking (SDN) paradigm down to the physical layer. The implementation of optical SDN requires the full abstraction and virtualization of each network element in order to enable complete control by a centralized network controller. To pursue this objective, photonics transmission components and their transmission functionalities must be abstracted to allow the definition of the control states and a real-time quality-of-transmission (QoT) evaluation of transparent lightpaths (LP). In this work, we propose an SDN based model of a photonic switching fabric that allows determining the control state and evaluating QoT degradation. Our investigations present a wideband optical switch design based on photonic integrated circuits (PICs), where QoT degradation is abstracted using a structure-agnostic approach based on machine learning (ML). The ML engine training and testing datasets are generated synthetically by software simulation of the photonic switch architecture. Results show the potential of the proposed technique to predict QoT impairments with high accuracy, and we envision its application in a real-time control plane.The electrical-to-optical power conversion efficiencies of the light-emitting devices based on gallium nitride (GaN) are seriously limited by electron leakage currents due to the relatively low mobility and activation ratio of holes. However, there have been few theoretical models on the behavior of the leakage current with an increasing total current. We develop an Ohmic-law-like method to describe the transport behaviors of the systems with electron and hole currents simultaneously. Based on reasonable assumptions, the ratio of the leakage current to the total current is related to the differential resistances of the devices. Through the method, we develop analytical models of the leakage currents in GaN-based laser diodes (LDs) and light-emitting diodes (LEDs). The ratios of the leakage currents with total currents in LDs and LEDs are shown to increase, which explains the sublinear behaviors of the luminescence-current (LI) curves of the devices. The theory agrees well with the numerical simulation and experimental results in larger current ranges in comparison to the traditional ABC model. The above analytical model can be used to fast evaluate the leakage currents in GaN-based LDs and LEDs.We report on the design and experimental characterization of a suspended silicon nitride subwavelength grating possessing a polarization-independent guided-mode resonance at oblique incidence. At this resonant wavelength we observe that the transverse intensity profile of the transmitted beam is consistent with a first-order spatial differentiation of the incident beam profile in the direction of the grating periodicity, regardless of the incident light polarization. These observations are corroborated by full numerical simulations. The simple one-dimensional and symmetric design, combined with the thinness and excellent mechanical properties of these essentially loss-free dieletric films, is attractive for applications in optical processing, sensing and optomechanics.GeSn alloys are the most promising direct band gap semiconductors to demonstrate full CMOS-compatible laser integration with a manufacturing from Group-IV materials. Here, we show that room temperature lasing, up to 300 K, can be obtained with GeSn. This is achieved in microdisk resonators fabricated on a GeSn-On-Insulator platform by combining strain engineering with a thick layer of high Sn content GeSn.Unidirectionally propagating wave (UPW) such as surface magnetoplasmon (SMP) has been a research hotspot in the last decades. In the study of the UPW, metals are usually treated as perfect electric conductors (PECs). https://www.selleckchem.com/products/dcemm1.html However, it was reported that the transverse resonance condition induced by the PEC wall(s) may significantly narrow up the complete one-way propagation (COWP) band. In this paper, ultra-broadband one-way waveguides are built by utilizing the epsilon-negative (ENG) metamaterial (MM) and/or the perfect magnetic conductor (PMC) boundary. In both cases, the total bandwidth of the COWP bands are efficiently enlarged by more than three times than the one in the original metal-dielectric-semiconductor-metal structure. Moreover, the one-way waveguides consisting of gradient-index metamaterial are proposed to achieve broadband truly rainbow trapping (TRT). In the full-wave simulations, clear broadband TRT without back reflection is observed in terahertz regime. Besides, giant electric field enhancement is achieved in a PMC-based one-way structure, and the amplitude of the electric field is enormously enhanced by five orders of magnitude. Our findings are beneficial for researches on broadband terahertz communication, energy harvesting and strong-field devices.The magnetic field gradient within optical pumping magnetometers (OPMs) suppresses sensitivity improvement. We investigated the effects of the magnetic field gradient along the x-, y-, and z-axes on the limiting factors of magnetometers under extremely low magnetic field conditions. We modified the magnetic field gradient relaxation model such that it can be applied to atoms in the spin exchange relaxation free (SERF) regime. The gradient relaxation time and spin polarizations, combined with fast spin-exchange interaction, were determined simultaneously using the oscillating cosine magnetic field excitation and amplitude spectrum analysis method. During the experiments, we eliminated the errors caused by the temperature and pumping power, and considered different isotope spin exchange collisions in naturally abundant Rb during the data analysis to improve the fitting accuracy. The experimental results agreed well with those of theoretical calculations and confirmed the accuracy of the improved model. The contribution of the transverse magnetic field gradient to the relaxation of the magnetic field gradient cannot be ignored in the case of small static magnetic fields. Our study provides a theoretical and experimental basis for eliminating magnetic gradient relaxation in atomic sensors in the SERF region.It is known that a twisted Gaussian Schell-model (TGSM) beam with elliptical Gaussian amplitude will rotate its beam spot upon propagation because of the vortex structure of the transverse energy flux. In this paper, we study a special kind of twisted partially coherent beams named twisted Hermite-Gaussian correlated Schell model (HGCSM) beam whose degree of coherence (DOC) is non-circularly symmetric but the source amplitude is of the circular Gaussian profile. Our results reveal that the beam spot (average intensity distribution) does not rotate during propagation even if the circular symmetry of the beam spot is broken. However, the DOC pattern shows the rotation under propagation. From the investigation of the transverse energy flux and OAM density flux, we attribute the nontrivial rotation phenomenon to the redistribution of the transverse energy flux by non-circular DOC. Furthermore, based on Hyde's approach [J. Opt. Soc. Am. A37, 257 (2020)10.1364/JOSAA.381772], we introduce a method for the generation of this class of twisted partially coherent sources. The non-rotation of the beam spot and rotation of the DOC are demonstrated in experiment.Due to the wavelength-selective absorption characteristic of indium gallium nitride (InGaN) ternary alloy, the InGaN-based photodetectors (PDs) show great potential as high signal-to-noise ratio (SNR) receivers in the visible light communication (VLC) system. However, the application of InGaN-based PDs with simple structure in the VLC system is limited by slow speed. Integration of graphene (Gr) with InGaN is an effective strategy for overcoming the limitation. Herein, we report on a high responsivity and fast response PDs based on Gr/InGaN heterojunctions. It finds that the three-layer Gr (T-Gr) can effectively improve the InGaN-based PDs photoelectric properties. The T-Gr/InGaN PDs show a high responsivity of 1.39 A/W@-3 V and a short rise/fall time of 60/200 µs, which are attributed to the combination of the high-quality InGaN epitaxial films and finite density of states of three-layer graphene. The fast response with high responsivity endows the T-Gr/InGaN PDs with great potential for selective detection of the VLC system.