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Finally, combinatorial treatment with tamoxifen, TNFα and short-hairpin (sh)-NCOR1 resulted in enhanced suppression of tumor growth in MCF7 xenograft mice compared to single tamoxifen treatment. In conclusion, TNFα promoted tamoxifen sensitivity through the dissociation of the ERα-p53-NCOR1 complex, pointing at NCOR1 as a putative therapeutic target for overcoming tamoxifen resistance in ERα-positive breast cancer.Introduction The use of vitamin K antagonists (VKAs) in non-valvular atrial fibrillation (NVAF) is complicated due to the narrow therapeutic margin they present and their unpredictable dose-response relationship. Most studies are based on warfarin, with the results being extrapolated to acenocoumarol. However, studies comparing the two treatments in terms of the degree of anticoagulation control are scarce, justifying the present study. Main factors associated with poor control of time in therapeutic range (TTR) of anticoagulated patients are also studied. Methods Cross-sectional study, with real-world data from patients treated in primary care (PC). Data were obtained from the System for the Improvement of Research in PC (SIDIAP) database, covering 60,978 NVAF-anticoagulated patients from 287 PC centres in 2018. Descriptive statistics were derived, and odds ratios were estimated by multivariate logistic regression. Results 41,430 patients were considered 93% were being treated with acenocoumarol and 7% with warfarin. There was no difference in poor control of TTR between the two types of VKA treatment, acenocoumarol and warfarin (38.9 vs. 38.4; p = 0.610). Poor anticoagulation control was mainly associated with advanced alcoholism (OR = 1.38), liver failure (OR = 1.37) and intracranial haemorrhage (OR = 1.35) as well as female sex, age less then 60 years, cardiovascular history, diabetes mellitus and other variables. Conclusions There is no association between poor anticoagulation control and the type of VKA treatment administered. Factors associated with poor control of TTR must be considered in clinical practice to improve control and decision-making.Increases in cereals grain yield in the last decades have increased the accumulation of straw on the soil after harvest. Farmers typically open burn the straw to prepare the soil for the next crop, resulting in pollution, emission of greenhouse gases, erosion, loss of soil organic matter, and wildfires. An alternative is feeding straw to ruminants, but straw nutritive value is limited by its high content of lignocellulose and low content of protein. Cereal breeding programs have focused on improving grain yield and quality and agronomic traits, but little attention has been paid to straw nutritive value. We screened straw from 49 genotypes of oats and 24 genotypes of wheat from three cereal breeding trials conducted in Chile for in vitro gas production kinetics. We found moderate effects of the genotype on gas production at 8, 24, and 40 h of incubation, and on the maximum extent and rate of gas production. Gas production was negatively associated with lignin and cellulose contents and not negatively associated with grain yield and resistance to diseases and lodging. Effects observed in vitro need to be confirmed in animal experiments before gas production kinetics can be adopted to identify cereal genotypes with more digestible straw.High-order harmonic generation is a nonlinear process that converts the gained energy during light-matter interaction into high-frequency radiation, thus resulting in the generation of coherent attosecond pulses in the XUV and soft x-ray regions. [https://www.selleckchem.com/products/Azacitidine(Vidaza).html 5-Azacytidine purchase] Here, we propose a control scheme for enhancing the efficiency of HHG process induced by an intense near-infrared (NIR) multi-cycle laser pulse. The scheme is based on introducing an infrared (IR) single-cycle pulse and exploiting its characteristic feature that manifests by a non-zero displacement effect to generate high-photon energy. The proposed scenario is numerically implemented on the basis of the time-dependent Schrödinger equation. In particular, we show that the combined pulses allow one to produce high-energy plateaus and that the harmonic cutoff is extended by a factor of 3 compared to the case with the NIR pulse alone. The emerged high-energy plateaus is understood as a result of a vast momentum transfer from the single-cycle field to the ionized electrons while travelling in the NIR field, thus leading to high-momentum electron recollisions. We also identify the role of the IR single-cycle field for controlling the directionality of the emitted electrons via the IR-field induced electron displacement effect. We further show that the emerged plateaus can be controlled by varying the relative carrier-envelope phase between the two pulses as well as the wavelengths. Our findings pave the way for an efficient control of light-matter interaction with the use of assisting femtosecond single-cycle fields.Van der Waals epitaxial GaN thin films on c-sapphire substrates with a sp2-bonded two-dimensional (2D) MoS2 buffer layer, prepared by pulse laser deposition, were investigated. Low temperature plasma-assisted molecular beam epitaxy (MBE) was successfully employed for the deposition of uniform and ~5 nm GaN thin films on layered 2D MoS2 at different substrate temperatures of 500, 600 and 700 °C, respectively. The surface morphology, surface chemical composition, crystal microstructure, and optical properties of the GaN thin films were identified experimentally by using both in situ and ex situ characterizations. During the MBE growth with a higher substrate temperature, the increased surface migration of atoms contributed to a better formation of the GaN/MoS2 heteroepitaxial structure. Therefore, the crystallinity and optical properties of GaN thin films can obviously be enhanced via the high temperature growth. Likewise, the surface morphology of GaN films can achieve a smoother and more stable chemical composition. Finally, due to the van der Waals bonding, the exfoliation of the heterostructure GaN/MoS2 can also be conducted and investigated by transmission electron microscopy. The largest granular structure with good crystallinity of the GaN thin films can be observed in the case of the high-temperature growth at 700 °C.